BATOP GmbH
Booth number: 4205-29
www.batop.de
About us
BATOP is a leading manufacturer of ultrafast semiconductor optoelectronics devices with a wide expertise and experience in thin film technology based on molecular beam epitaxy and sputter coating. Our product portfolio includes non-linear optical components such as saturable absorbers in transmission or reflection, photoconductive antennas for terahertz generation and detection as well as picosecond microchip lasers and components for ultrafast fiber lasers.
In addition, we are also offering complete THz spectrometers with a spectral range of up to 5 THz and with a wide range of accessories. Furthermore, we are growing wafers according to customer specifications based on III-V semiconductors.
Address
Stockholmer Str. 14
07747 Jena
Germany
E-mail: info@batop.de
Phone: +49 3641 6340090
Internet: www.batop.de
Contact person:
Rico Hohmuth
CTO
E-mail: rico.hohmuth@batop.de
Martin Voitsch
Senior Scientist
Products & Services
Saturable absorbers for mode locking of ultrashort pulse lasers
Saturable noise suppressor for suppression of optical noise, e.g. ASE or not fully suppressed pulses after a pulse picker
Photoconductive antennas for THz generation and detection
THz lenses and windows made of TPX or silicon for THz beam guiding
THz time domain spectrometers for material characterisation
Microchip laser, a compact 150 ps laser source with adjustable pulse repetition rate from single shot to 500kHz
Fiber laser evaluation kit including all components to build a mode locked picosecond fiber laser and to perform basic experiments
Fiber laser components required to build a fiber laser and to easily integrate BATOP's SAMs into a fiber laser system
Custom wafers, GaAs wafer with high quality semiconductor epitaxial thin film stacks using III-V arsenide based materials grown according to customer specifications, optional with a patterned metallization and/or passivation
Fiber Laser Oscillator Core Module (FMSPW)
The Fiber Laser Oscillator Core Module (FMSPW) is a Micro-optic package containing the core components for a mode-locked fiber laser. The package is available for different wavelengths, e.g. 1560nm, 1030nm and 1064nm, and includes a saturable absorber mirror (SAM) for mode locking as well as a lens pair for the optimization of the SAM performance. Optional it can be delivered with a fiber based pump port with a dichroitic mirror, polarizer or active polarization maintaining fiber.
THz Spectrometer
Our benchtop THz spectrometer is an easy to use device, designed for laboratories where, e.g., material characterization shall be performed in the THz region. The spectrometer comes with an internal sample compartment, which can be purged with nitrogen, or with external fiber-coupled antennas. Both setups can be used to conduct transmission and reflection measurements with a collimated or focused THz beam. The spectrometer is controlled via USB using a laptop running our T3DS software package.
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Photoconductive Antenna (PCA)
We offer photoconductive antennas with a LT-InGaAs absorber layer developed as terahertz emitter and detector for 780 / 1060 / 1550 nm laser systems.
Various gap dimensions, geometries and mounting options are available.
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Laser
We offer various laser systems:
Femtosecond mode-locked fiber laser (1560 nm)
Picosecond q-switched microchip laser (1064 nm)
Ready-to-use single mode cw laser (808 / 975 / 1480 nm)
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Saturable Absorber
Saturable absorber mirrors (SAM) are the key components for generation of ultrashort pulses in the picosecond and femtosecond range in mode-locked lasers.
BATOP offers a wide range of saturable absorber mirrors for mode locking of solid state, fiber and thin disk lasers starting at a wavelength of 800 nm up to 3 µm. Furthermore, our portfolio covers saturable absorbers (SA) without Bragg mirror for transmission applications such as mode locking of e.g. fiber ring lasers, as well as saturable output couplers (SOC) combining a saturable absorber and an output coupler in one device.
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Custom Wafer
We grow GaAs wafers with high quality epitaxial thin film stacks using the materials AlAs, GaAs, InAs, AlGaAs, AlInAs and InGaAs according to customer specifications, optional with a patterned metallization and/or passivation. Additionally, we offer low temperature growth for applications requiring a fast response time. The available wafer sizes are 2”(50.8mm) and 100mm diameter.
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