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The FBH presents ongoing research activities in transferring the hybrid micro-integrated concept of GaAs-based narrow-linewidth extended cavity diode lasers (ECDLs) onto a single chip. This novel monolithically-integrated ECDL – (mECDL) is based on an innovated 2-step growth process. The concept can be adopted to realize mECDLs at different wavelengths.
Ultra-narrow linewidth AlGaAs/GaAs-based mECDLs emitting at 1064 nm (for iodine spectroscopy) and 778 nm (for 2-photon rubidium spectroscopy) have already been successfully demonstrated. Monolithic integration increases the thermal and mechanical stability of the lasers and allows for cost-effective production of wafer-level lasers for space-borne applications of quantum photonics.
Exhibitor: Ferdinand-Braun-Institut gGmbH
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